4 kV 4H-SiC epitaxial emitter bipolar junction transistors

S Balachandran,T.P Chow,A Agarwal,K.A Jones,C Scozzie

doi:10.1109/led.2005.851174

4 kV 4H-SiC epitaxial emitter bipolar junction transistors

S Balachandran, T.P Chow + Show 3 more

https://doi.org/10.1109/led.2005.851174

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Journal: IEEE Electron Device Letters	Publication Date: Jul 1, 2005
Citations: 33

Affiliation: Rensselaer Polytechnic Institute, Cree (United States), DEVCOM Army Research Laboratory

#Emitter Stripe Width #Common-emitter Current Gain + Show 8 more

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Abstract

In this paper, we present 4H-SiC bipolar junction transistors (BJTs) with open-base blocking voltage (BV/sub CEO/) of 4000 V, specific on-resistance (R/sub on,sp/) of 56 m/spl Omega/-cm/sup 2/, and common-emitter current gain /spl beta//spl sim/9. These devices are designed with interdigitated base and emitter fingers with multiple emitter stripes. We assess the impact of design (emitter stripe width and contact spacing) on device performance and also examine the effect of emitter contact resistance on the device forward conduction characteristics.

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