Abstract
We demonstrate a 200G capable WDM O-band optical transceiver comprising a 4-element array of Silicon Photonics ring modulators (RM) and Ge photodiodes (PD) co-packaged with a SiGe BiCMOS integrated driver and a SiGe transimpedance amplifier (TIA) chip. A 4×50 Gb/s data modulation experiment revealed an average extinction ratio (ER) of 3.17 dB, with the transmitter exhibiting a total energy efficiency of 2 pJ/bit. Data reception has been experimentally validated at 50 Gb/s per lane, achieving an interpolated 10E-12 bit error rate (BER) for an input optical modulation amplitude (OMA) of -9.5 dBm and a power efficiency of 2.2 pJ/bit, yielding a total power efficiency of 4.2 pJ/bit for the transceiver, including heater tuning requirements. This electro-optic subassembly provides the highest aggregate data-rate among O-band RM-based silicon photonic transceiver implementations, highlighting its potential for next generation WDM Ethernet transceivers.
Highlights
The new era of disaggregated data centers (DC) [1] in conjunction with the ceaseless growth of intra DC traffic [2], calls for advances in the deployed optical transceiver technologies that have to offer increased operational speed and aggregate bandwidth in a low power and footprint envelope
ring modulators (RM)-based Tx layouts offer significant footprint and energy advantages compared to Mach Zehnder modulator (MZM), with our recent work on the first WDM Si-Pho O-band Tx reporting a 4×40Gb/s setup with just 2.2 pJ/bit energy consumption [14], lacking, a co-integrated Rx part to turn it into a complete WDM TxRx sub-assembly
We extend our previous work on RM-based WDM optical Txs [14] and demonstrate a complete 200 Gb/s capable O-band WDM transceiver sub-assembly that performs at 50 Gb/s linerates and offers the highest aggregate bandwidth among the so far reported Si-Pho RM-based O-band transceiver layouts
Summary
The new era of disaggregated data centers (DC) [1] in conjunction with the ceaseless growth of intra DC traffic [2], calls for advances in the deployed optical transceiver technologies that have to offer increased operational speed and aggregate bandwidth in a low power and footprint envelope. Silicon photonics (SiPho) stand out as a technology enabler, with previous demonstrations in the C-band [3,4,5] having already achieved 8×40G [3] operation in optical transmitter (Tx) layouts, while complete C-band transceiver modules incorporating both the Tx and receiver (Rx) circuits together with their electronic driver and TIA blocks have reached 4-lane WDM setups with a rather moderate aggregate bandwidth of 80 Gb/s [5]. We extend our previous work on RM-based WDM optical Txs [14] and demonstrate a complete 200 Gb/s capable O-band WDM transceiver sub-assembly that performs at 50 Gb/s linerates and offers the highest aggregate bandwidth among the so far reported Si-Pho RM-based O-band transceiver layouts It comprises a SiPho 4-channel transceiver chip co-packaged with its electronics onto a polymer-based circuit board, with its 4-channel electronic driver and TIA circuits having been fabricated in a 55 nm SiGe technology platform. The TIAs consume 448 mW, corresponding to a power consumption of 2.24 pJ/bit and concluding to a total transceiver efficiency of 4.24 pJ/bit at 50Gb/s
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