4:2 Compressor Design for Low Leakage Applications in FinFET Technology

Abstract

The increased short-channel effects in the ultra-nanoscale regime limit the operation of complementary metal oxide semiconductor (CMOS) technology. To combat the issues in the ultra-nanoscale regime, fin-shaped field effect transistor (FinFET) technology is the best choice because of its numerous advantages over CMOS technology. FinFET enhances the further scaling of the devices and control over the channel. Therefore, this research paper presents the implementation of a low leakage 4:2 compressor in FinFET technology. A compressor is a general block, especially used in multiplier units and hence in digital signal processing (DSP) systems. The design of the low power compressor improves the overall efficiency of the DSP systems. An extensive study of the proposed low power 4:2 compressor at 7 nm technology node is done in the paper. Mentor Graphics tools are used for the circuit simulations and analyzes. The key parameters, such as leakage power, delay, power delay product (PDP), and the process voltage temperature (PVT) variations, are estimated for the performance evaluation. The proposed 4:2 compressor saves 87.33% of leakage power and is 75.90% more energy efficient compared to its conventional counterpart.