Abstract
We investigated 10‐(4‐phenylphenyl)‐9‐(3‐diphenylphosphinyl‐phenyl)anthracene as a host material in the emitting layer and a hole‐blocking layer in deep blue OLEDs, respectively. By contrast, introducing a thin layer of this triphenylphosphine oxide moiety‐modified anthracene derivative as the hole blocker exhibits a maximum external quantum efficiency of 5.49% with CIE (0.126, 0.118) and in particular, high device stability with lifetime LT95 of ca. 540 h @ 1000 cd m–2.
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