Abstract
3kV 600A 4H-SiC flat package type pn diodes have been developed and their reverse recovery characteristics have been investigated. In spite of pn junction diodes, the developed diodes have a short reverse recovery time of 0.153μs at room temperature. This diodes have 1/10th lower recovery loss and 1/3rd lower recovery time than those of a commercialized 2.5kV Si diode in spite of high blocking voltage. When this diodes apply to PWM inverter, the carrier frequency that on-state loss is equal to switching loss is 1.45 times the Si diode's frequency at 398K. By using the developed diode, high voltage high frequency inverter operation can be realized.
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