3He Impurity Effects on the Growth Kinetics of 4He Crystals

Abstract

We report the growth kinetics of the 4He crystals with a small amount of 3He impurities around 0.8 K. The growth resistance was measured using the response of the charged interface with respect to an externally applied voltage. In 5 ppm and 10 ppm 3He mixtures, it is found that (1) the relaxation process can be expressed as an exponential behavior, (2) the growth resistance becomes larger compared to pure 4He and does not have a strong 3He concentration dependence, and (3) the temperature dependence of the growth resistance is much the same as pure 4He. We discuss several possible explanations of the present experiment.