3D-IC performance computing of single-gate SOI CMOS inverter

Abstract

Based on Elmore delay model and 3D-IC interconnection model and 2003 ITRS, we compute two parameters of interconnection time delay (T/sub N/) and power delay product (PDP) in which facing 3D-IC (N gates and m device layers) of single-gate SOI CMOS inverter and running VC++ and Excel. T/sub N/ and PDP are constructed in case of a 3D-IC net with both horizontal and vertical wire. A major focus on analyzing T/sub N/ and PDP is given by finding their non-line factors /spl beta//sub 1/, /spl beta//sub 2/ and /spl beta//sub 3/ which result mainly from the vertical wire contribution. The parabola-shape /spl beta//sub 1/ of T/sub N/ can reveal that T/sub N/ has minimum when m = 6 - 8. The flat peak parabola-shape /spl beta//sub 2/ of PDP's dynamic component (about netload C. V/sub dd/ and f/sub elk/) can be observed when 2003 ITRS is in 90nm-22nm technology nodes. The semi-U-shape /spl beta//sub 3/ of PDP's static component (about I/sub off/ and V/sub dd/) can reveal that PDP has minimum when in 90nm-45nm technology nodes. To sum up, in 90nm-45nm technology nodes of 2003 ITRS, when device layers m = 6 - 8, then T/sub N/ and PDP of 3D-IC net have their minimum.