Abstract
Silicon and gallium arsenide (GaAs) based three dimensional photonic structure is realized here to envisage at Terahertz mirror device, which is purely belonged to the application of nano photonic devices. Further plane wave expansion technique pertaining to the mathematical formulation is disclosed in this research to evaluate the photonic bandgap of silicon and gallium arsenaide crystal structure. Aside this, lattice spacing and diameter of air holes of both the structure play key role to understand the above said application, which controls the reflection and transmission of signal . Finally it is revealed that with the proper combination of lattice spacing and diameter of air holes of the said 3D structure determines a range of Terahertz frequency. Finally, the outcome of the paper claims that the proposed structure can be a suitable candidate for nano photonic application.
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