Abstract
Three-dimensional (3D) Dirac semimetal Cd<sub>3</sub>As<sub>2 </sub>has an important application prospect in future for broad-spectrum photodetector due to its unique topological energy-band layout and excellent optical absorption capacity. However, extremely high dark current of individual Cd<sub>3</sub>As<sub>2</sub> is the key bottleneck limiting its photoelectric detection performance. Herein, the strategies of Zn element doping and construction hetero-structure with Sb<sub>2</sub>Se<sub>3</sub> are co-adopted for maximize the performance of Cd<sub>3</sub>As<sub>2</sub> based device. The constructed 3D Dirac semimetal (Zn<sub>x</sub>Cd<sub>1-x</sub>)<sub>3</sub>As<sub>2</sub>/Sb<sub>2</sub>Se<sub>3</sub> film heterojunction photodetector prototype has efficiently achieve broad-spectra photoelectric detection from visible (450 nm) to nearinfrared region (1550 nm) wavebands at room temperature with superior performance, including high responsivity (Ri), detectivity (D*) as well as outstanding fast response time (τ). The excellent performance of the device may be attributed to high-quality of hetero-structure interface, strong light absorption capacity and suppressed dark current in (Zn<sub>x</sub>Cd<sub>1-x</sub>)<sub>3</sub>As<sub>2</sub>/Sb<sub>2</sub>Se<sub>3</sub> heterojunction system. This work has laid a solid foundation for the construction of a high-performance new topological semi-metal photodetector.
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