Abstract
This paper presents for the first time a full three-dimensional (3-D), multilayer, and multichip thermal component model, based on finite differences, with asymmetrical power distributions for dynamic electrothermal simulation. Finite difference methods (FDMs) are used to solve the heat conduction equation in three dimensions. The thermal component model is parameterized in terms of structural and material properties so it can be readily used to develop a library of component models for any available power module. The FDM model is validated with a full analytical Fourier series-based model in two dimensions. Finally, the FDM thermal model is compared against measured data acquired from a newly developed high-speed transient coupling measurement technique. By using the device threshold voltage as a time-dependent temperature-sensitive parameter (TSP), the thermal transient of a single device, along with the thermal coupling effect among nearby devices sharing common direct bond copper (DBC) substrates, can be studied under a variety of pulsed power conditions.
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