Abstract
Recent results on state-of-the-art SOI MOS transistors reveal the impact of the device miniaturization. The role of each dimension (length, width, thickness) is examined sequentially, by emphasizing the link with the other MOSFET dimensions. Ultra-thin gate oxide and silicon film enable, respectively, Gate-Induced Floating Body Effects (GIFBE) and super-coupling. In ultra-thin SOI films, the interface coupling effects are amplified leading to interesting consequences for carrier transport and multiple-gate operation. The self-heating problem in SOI MOSFETs can be alleviated by replacing the buried oxide with a different dielectric that offers improved thermal conductivity, without degrading the electrostatic behavior of the device. We describe the operation and scaling principles of transistors with double, triple or quadruple gates, which are governed by strong 3-D coupling effects.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
