Abstract
In this paper we present a new approach for analyzing 3D structure triple-gate MOSFETs using three different regions, one at the top and two in the sidewalls of the fin, which allows for considering different carrier mobilities in each region due to crystalline orientation and technological processing. A procedure for the extraction of the mobility parameters in each region is developed. Robustness of the proposed structure is validated by experimental data obtained on FinFETs. A very good agreement is obtained between experimental and simulated characteristics.
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