Abstract
This work presents for the first time a 3-D model of an SOI CMOS MEMS thermal wall shear stress sensor using multiphysics approach. The model involves three different physical domains and, when compared with the experimental results, shows an excellent agreement in every condition.After the validation process, the model has been used to perform a transient analysis on the device to evaluate the electro-thermal transient time, defined as the time required from the device to change its temperature from 10 to 90% of the steady state value when a step is applied to the biasing current.
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