Abstract
Ultraviolet detectors are widely used in space exploration, military affairs, and disinfection. To further improve the responsivity and response time, we propose and demonstrate AlN three-dimensional metal-semiconductor-metal (3D-MSM) and flip chip 3D-MSM (FC-3DMSM) ultraviolet detector here. The performance of devices with different etching depth and electrode spacing has been investigated using APSYS simulation. According to the simulation results, we fabricated 0.5 μm-etched 3D-MSM (3D-MSM- 0.5 μm) and 1.3 μm-etched FC-3DMSM (FC-3DMSM- 1.3 μm) devices. Response time is decreased by 29.3% and 13.8% for 3D-MSM- 0.5 μm and FC-3DMSM- 1.3 μm devices, and responsiveness exhibits a 20.5% and 46.6% improvement at 200nm, compared with traditional MSM device. This is due to varied internal electric field distribution of 3D-MSM and FC -3DMSM device configuration, which accelerates the collection of photo-generated carriers and improves the carrier collection efficiency. Our work should advance the development of nitrides ultraviolet detectors.
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