3D Monte Carlo Analysis of Discrete Dopant Effects on Electron noise in Si Devices

Abstract

This paper reports for the first time a simulation study of thermal noise in a simple test bed structure (three nanometric Si resistors) using an atomistic model and a continuum one. The 3D Monte Carlo atomistic approach that describes the electron-impurity interaction in the presence of discrete impurities was presented in (Barraud et al., 2002). This model has been successfully used to compute the electron mobility in Si resistors as a function of average doping concentration and to study the effect of impurity position in the channel of 50-nm MOSFET (Dolfus et al., 2004).