Abstract
Abstract The spectral response, short-circuit photocurrent and conversion efficiency of a reverse cell made with multicrystalline silicon wafers have been computed taking into account different values of base thickness, grain size, grain boundary recombination velocity, front and back surface recombination velocities and minority carrier diffusion length in the grains. The results are compared to those of a conventional multicrystalline cell computed under the same conditions. It is shown that the reverse cell structure, which simplifies the technological problems, particularly those related to the conventional emitter and front grid, could be a good alternative solution in the case of improved thin wafers.
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