3D memory matrix based on a composite memristor-diode crossbar for a neuromorphic processor

Abstract

An electrical circuit, topology, and a fabrication technology have been developed for an ultra large multilayer memory matrix having a non-volatile memory, low energy consumption and large-scale integration of elements based on the cells incorporating complementary bipolar memristors and a Zener diode. Unlike memory matrices applicable in information technology, the proposed matrix can not only store information but also allow for voltage weighing of input signals that pass through memristors and their summing. What is more, low signal degradation when summing is achieved by selecting a special circuit for sending input impulses.Technologically, large-scale integration of elements is implemented by sequential vertical build-up of planar bilayer memory matrices on a crystal into a 3D structure consisting of identical horizontal mutually mirrored composite crossbars that include an active memristor layer and a semiconductor Zener diode layer. Both layers as well as the conductive paths can be fabricated by a vacuum technology, using a magnetron process module. A SPICE model, which allows for optimization of parameters and operating modes of elements of the cell and of the matrix in general, has been constructed for a composite memristor crossbar with a Zener diode.