3D integration technology for sensor application using less than 5μm-pitch gold cone-bump connpdfection

Abstract

Three-dimensional (3D) integrated circuit (IC) technology is an effective solution to reduce the manufacturing costs of advanced two-dimensional (2D) large-scale integration (LSI) while ensuring equivalent device performance and functionalities. This technology allows a new device architecture using stacked detector/sensor devices with a small dead sensor area and high-speed operation that facilitates hyper-parallel data processing. In pixel detectors or focal-plane sensor devices, each pixel area must accommodate many transistors without increasing the pixel size. Consequently, many methods to realize 3D-LSI devices have been developed to meet this requirement by focusing on the unit processes of 3D-IC technology, such as through-silicon via formation and electrical and mechanical bonding between tiers of the stack. The bonding process consists of several unit processes such as bump or metal contact formation, chip/wafer alignment, chip/wafer bonding, and underfill formation; many process combinations have been reported. Our research focuses on a versatile bonding technology for silicon LSI, compound semiconductor, and microelectromechanical system devices at temperatures of less than 200̂C for heterogeneous integration. A gold (Au) cone bump formed by nanoparticle deposition is one of the promising candidates for this purpose. This paper presents the experimental result of a fabricated prototype with 3-μm-diameter Au cone-bump connections with adhesive injection, and compares it with that of an indium microbump (μ-bump). The resistance of the 3-μm-diameter Au cone bump is approximately 6 Ω. We also investigated the influence of stress caused by the bump junction on the MOS characteristics.