Abstract
The efficacy of many system-designs based on free-space optical interconnects and smart-pixels, depends on the availability of a flexible, high-density, silicon-compatible, optoelectronic technology platform. To this end, we demonstrate the hybrid 3D integration of GaAs-AlGaAs 850nm multiple quantum well (MQW) detectors and modulators directly over active 0.8 /spl mu/m silicon CMOS circuits. To test this technique, a self electro-optic effect device (SEED) input-light detector was flip-chip bonded over a transimpedance receiver circuit, whose output was fed to a simple transmitter circuit and then to another SEED device that served as an output-light modulator.
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