Abstract

AbstractNoninvasive and depth‐sensitive measurements of dielectric properties are becoming of great interest in advanced and complex nanostructured architectures. Here, a straightforward parallel approach applicable in peak force Kelvin probe force microscopy for a 3D measurement of dielectric constants at the nanoscale is demonstrated. The proposed approach features a simultaneous measurement of the mechanical, electrical, and depth‐dependent dielectric properties applied to embedded nanostructures. The findings provide initial elements for further development of experimental dielectric nano‐tomography methods for characterizing buried and embedded systems and dielectric interfaces.

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