3D Hinge Transport in Acoustic Higher-Order Topological Insulators

Abstract

The discovery of topologically protected boundary states in topological insulators opens a new avenue toward exploring novel transport phenomena. The one-way feature of boundary states against disorders and impurities prospects great potential in applications of electronic and classical wave devices. Particularly, for the 3D higher-order topological insulators, it can host hinge states, which allow the energy to transport along the hinge channels. However, the hinge states have only been observed along a single hinge, and a natural question arises: whether the hinge states can exist simultaneously on all the three independent directions of one sample? Here we theoretically predict, numerically simulate, and experimentally observe the hinge states on three different directions of a higher-order topological phononic crystal, and demonstrate their robust one-way transport from hinge to hinge. Therefore, 3D topological hinge transport is successfully achieved. The novel sound transport may serve as the basis for acoustic devices of unconventional functions.