3D heterogeneous integrated monolayer graphene Si-CMOS RF gas sensor platform

Abstract

We report the first monolithically integrated CMOS-monolayer graphene gas sensor, with a minimal number of essential post-CMOS processing steps, demonstrating a platform technology that enables integration of nascent two-dimensional materials with the low latency, low power and cost advantages of silicon CMOS (Si-CMOS) platform. Heterogeneous integration of Si-CMOS and two-dimensional materials such as monolayer graphene is a step toward enabling future mobile sensor networks for the Internet of Things (IoT) and achieving more-than-Moore (MtM) scaling. The graphene integration presented here addresses considerable barriers to heterogeneous integration with Si-CMOS, namely post-CMOS process parameters such as temperature and material limits, and the low-power requirements of untethered sensors in general. A co-designed driving circuit in mature 0.18 μm Si-CMOS foundry technology provides the foundation for directly integrated graphene chemiresistive junctions in a radio frequency (RF) wireless-enabled circuit platform.