Abstract
AbstractThree‐dimensional global simulations were carried out for a small Czochralski furnace for silicon crystal growth with a recently developed global model. The furnace is placed in a transverse magnetic field with rotating crucible and crystal. The convective, conductive and radiative heat transfers in the entire furnace were solved in a three‐dimensionally conjugated way. Three‐dimensional distributions of temperature and velocity were analyzed. The melt‐crystal interface was found to have nearly rotational symmetry, and the azimuthal non‐uniformity of temperature is much weaker on the crystal and crucible sidewalls in the case of high rotation rates of crucible and crystal than in the case of non‐rotating crucible and crystal. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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