Abstract
We explore a 3D cross-point spin transfer torque magnetic random access memory (STT-MRAM) array based on the integration of a perpendicular magnetic tunneling junction (pMTJ) with a matching two-terminal selector. The integrated two-terminal device provides a unique opportunity for a high density, low cost stackable storage class memory that can achieve a fast operation speed, long data retention, low bit error rate (BER) and high endurance. 55[Formula: see text]nm size pillar shaped pMTJ and selector devices have been fabricated and characterized. The selector is compatible with pMTJ whether it is in the high or low resistance state. The pMTJ can be RESET and SET after the selector turns on. We model the dynamic switching of the coupled pMTJ and selector devices. Our model shows the importance of the optimal matching of pMTJ magnetic properties with selector resistive properties to achieve high performance.
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