Abstract
Spatial distributions of implanted ions have been derived from depth profiles of implants at varied incidence angle by applying tomographic techniques. To this end we have developed a new version of an algorithm known as simultaneous iterative reconstruction technique (SIRT), which covers the experimental concentration range of about three decades. In addition, the finite depth resolution of the nuclear reaction analysis (NRA) is accounted for in our computer program. In this way, we have reconstructed the three-dimensional implantation distributions of 0.15 MeV 1H, 1.5 and 6 MeV 15N, and 4 MeV 30Si in amorphized Ge layers. The agreement with TRIM calculations is reasonable: 10% ± 0.5% for the first and 10% ± 5% for the second range moments. Consequences of the longitudinal and lateral tailing for ion beam applications to large scale integration problems are discussed.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
