Abstract
In this paper, a 3D analytical model for the SOI LDMOS with alternating silicon and high-k dielectric pillars (HK LDMOS) is presented. By solving the 3D Poisson’s equation, the surface potential and electric field distribution are derived. A criterion for obtaining the optimal breakdown voltage and drift region doping concentration is obtained. The analytical results are well matched with the numerical results, which confirms the model validity. Based on these models and the numerical simulation, the electric field modulation mechanism and the breakdown characteristics of HK LDMOS are investigated.
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