Abstract
The characterization of ferroelectric thin-film planar microwave devices using the method of line (MoL) has been summarized in this paper and a method in order to dynamically characterize ferroelectric layers has been proposed. Because the permittivity-dc electric field dependence in ferroelectric materials is used to tune microwave devices, it is necessary to develop a suitable analysis method to accurately characterize ferroelectric materials. First, this paper presents results of 2D and 3D analysis of tunable planar devices and, next, the dynamic characterization of ferroelectric thin-film layers
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