Abstract
Three-dimensional analysis is performed on defects found in an integrated circuit from high-contrast images that are obtained via an inexpensive technique that combines confocal reflectance microscopy with one-photon optical beam-induced current (1P-OBIC) imaging. The same focused beam simultaneously produces the 1P-OBIC and reflectance signals from the illuminated spot. Exclusive 3D distributions of the metal and semiconductor sites in the vicinity of defects caused by electrical overstress (decrease in OBIC current) and unwanted formation of generation centers (increase in OBIC current), reveal features which are difficult to isolate with confocal or 1P-OBIC microscopy alone.
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