Abstract
Results of an epitaxial growth of 3C-SiC epilayers on hexagonal 6H-SiC, 4H-SiC substrates are described. The study of the obtained epitaxial layers grown on 6H substrates was made by photoluminescence and optical microscopy. Also, an image analysis of the interface of 3C-SiC epitaxial layers with 6H, 4H, and 15R substrates obtained by Transmission Electron Microscopy (TEM) are presented. Difference between the layers on the Si and C faces are discussed.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
