Abstract
AbstractOrganic thin film transistors are fabricated on the plastic substrates through four‐level mask process without patterning for photolithography in order to approach a simple fabrication process. KIST‐JM‐1 as an organic molecule for self—assembly monolayers is deposited on the surface of the zirconium oxide gate dielectric layer for the better device performance. The effect of gate dielectric surface modification on the field effect mobility of OTFTs has been examined and these prototype organic transistors showed the excellent electrical characteristics such as the field effect mobility > 0.66cm2/Vs and Ion/Ioff > 105.
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