38 - Enasidenib (AG-221), A Selective Oral Inhibitor of Mutant Isocitrate Dehydrogenase 2 (IDH2) Enzyme, In Patients with Myelodysplastic Syndromes (MDS)

Abstract

Different types of Sn coatings are widely used in the electronics industry. However, they are susceptible to spontaneous whisker formation which can cause reliability issues. In this paper, whisker growth from submicron Sn thin films was studied at room temperature for 150 days. For this purpose, 99.99% pure Sn was vacuum evaporated onto 1.5 mm thick Cu and ceramic substrates, with an average thickness of 400 nm. It was found that the submicron thick Sn layers on a Cu substrate can generate intense whiskering directly after layer deposition. The microstructure, composition and grain orientation of the whiskers and the areas underneath were studied with a Scanning Ion Microscope (SIM) and a Transmission Electron Microscope (TEM). It was proven that the whisker growth was induced by Cu6Sn5 intermetallic layer growth between the Cu substrate and the Sn thin film which resulted in large stress within the film. We found the first evidence in a tin-copper layer system that the high stress due to the intermetallic formation itself can initiate the interfacial flow mechanism (without a direct mechanical load) between the Sn layer and the intermetallic layer. This phenomenon can explain the intense whisker growth from submicron Sn thin films.