Abstract
In this paper, we explored the underlying mechanism behind the intriguing increase in current density at low voltage with a corresponding rise in temperature. We identified key parameters associated with this phenomenon and developed a suitable equation for quantitative prediction. Subsequently, we demonstrated that the injection of current into emission layer in the module can be accurately pre‐evaluated based on TEG device measurements. Our research results not only establish a theoretical framework for evaluating performance from TEG device development to the module state but also present the physical cause of temperature sensitivity in OLEDs.
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