Abstract
Two static and two dynamic frequency dividers based on enhancement and depletion 0.2-µm gate length AlGaAs/GaAs-high electron mobility transistor (HEMT) (f T = 60 and 55 GHz) technology were designed and fabricated. High-speed operations up to 35 GHz for the static frequency dividers and 48 GHz for the dynamic dividers, respectively, have been achieved. The single-ended input and differential outputs to ground simplify many applications. The power consumption is 250 mW for the divide-by-two dividers and 350 mW for the divide-by-four dividers using two supply voltages of 4 and -2.5 v.
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