350K operating silicon nanowire single electron/hole transistors scaled down to 3.4nm diameter and 10nm gate length

Abstract

For the first time, we report the operation of Single Electron Transistors (SETs) and Single Hole transistors (SHTs) up to 350K from Q-gate CMOS transistors at ultimate scaling. These results are obtained with gate lengths (L G ) scaled down to 10nm and ∼3.4nm diameter silicon nanowires (Si-NWs). The SETs and SHTs exhibit Coulomb oscillations in the nanoampere range up to 350 K which can be amplified to the milliampere range when coupled with conventional metal-oxide-semiconductor field-effect transistors (MOSFETs). Such a hybrid circuit is used further as negative differential resistance or as literal gate for logic. These demonstrations of SHT-FET coupling with L G =10nm operating at 350 K should invigorate the community on the future of single-electron devices and their circuit integration.