35-nm Zigzag T-Gate $\hbox{In}_{0.52}\hbox{Al}_{0.48} \hbox{As/In}_{0.53}\hbox{Ga}_{0.47}\hbox{As}$ Metamorphic GaAs HEMTs With an Ultrahigh $f_{\max}$ of 520 GHz

Kang-Sung Lee,Yoon-Ha Jeong,Yun-Ki Hong,Young-Su Kim

doi:10.1109/led.2007.901579

Abstract

Metamorphic GaAs high electron mobility transistors (mHEMTs) with the highest- f max reported to date are presented here. The 35-nm zigzag T-gate In 0.52 Al 0.48 As/In 0.53 Ga 0.47 As metamorphic GaAs HEMTs show f max of 520 GHz, f T of 440 GHz, and maximum transconductance ( g m ) of 1100 mS/mm at a drain current of 333 mA/mm. The combinations of f max and f T are the highest data yet reported for mHEMTs. These devices are promising candidates for aggressively scaled sub-35-nm T-gate mHEMTs.

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