Abstract

AbstractNon‐InGaZnO based metal‐oxide TFT is developed with high performance and good stability. Manufacturability was demonstrated with a high capacity, Gen‐2.5 size, color‐filter production line. Superb TFT performance was achieved with μ>80 cm2/Vsec, Ion/Ioff> 1010and S<0.2 V/dec. This TFT shows high stability under OLED and LCD operation conditions. A 4.8″ bottom emission AMOLED is demonstrated with aperture ratio larger than 50%. Power efficiency >6 lm/Watt at >500 nits was achieved with high display uniformity. The average power efficiency under video operation is beyond 20 lm/Watt.

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