Abstract
AbstractA full‐color 14‐inch active matrix organic light emitting diode (AMOLED) TV, which does not suffer from the well‐known pixel non‐uniformity of luminance using a simple pixel circuit design consisting of 3 transistors and 1 capacitor, has been developed using amorphous hafnium‐indium‐zinc oxide (a‐HIZO) thin‐film transistors (TFTs) as an active‐matrix backplane. The n‐channel a‐HIZO TFTs exhibit a field‐effect mobility of 10 cm2/V‐s, threshold voltage of 0.38V, on/off ratio of >108, and subthreshold gate swing of 0.21 V/decade. Notably, the long‐ and short‐range standard deviations for the threshold voltage were less than 0.1V and 0.02V, respectively.
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