33rd International Conference on the Physics of Semiconductors

Abstract

Preface to the Proceedings of the 33rd International Conference on the Physics of Semiconductors, Beijing, 2016Shaoyun Huang1, Yingjie Xing1, Yang Ji2, Dapeng Yu3, and Hongqi Xu11Beijing Key Laboratory of Quantum Devices, Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University, Beijing 100871, China2SKLSM, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China3State Key Laboratory for Mesoscopic Physics, Department of Physics, Peking University, Beijing 100871, ChinaFrom July 31st to August 5th, 2016, the 33rd International Conference on the Physics of Semiconductors (ICPS 2016) was held in Beijing, China, with a great success. The International Conference on the Physics of Semiconductors began in the 1950’s and is a premier biennial meeting for reporting all aspects of semiconductor physics including electronic, structural, optical, magnetic and transport properties. Reflecting the state of the art developments in semiconductor physics, ICPS 2016 served as an international forum for scholars, researchers, and specialists across the globe to discuss future research directions and technological advancements. The main topics of ICPS 2016 included:• Material growth, structural properties and characterization, phonons• Wide-bandgap semiconductors• Narrow-bandgap semiconductors• Carbon: nanotubes and graphene• 2D Materials beyond graphene• Organic semiconductors• Topological states of matter, topological Insulators and Weyl semimetals• Transport in heterostructures• Quantum Hall effects• Spintronics and spin phenomena• Electron devices and applications• Optical properties, optoelectronics, solar cells• Quantum optics, nanophotonics• Quantum information• Other topics in semiconductor physics and devices• Special topic: Majorana fermions in solid state