Abstract
AbstractThe 33 μm thick film vertical structure LEDs without any substrate were fabricated and their free standings were successfully realized by laser lift‐off and HVPE technology. Through the AFM analyses we know that the laser irradiation can causes big damage to the wafer. However, since the 33 μm thick film vertical structure LEDs without any substrate have longer distance between the laser irradiating plane and the quantum well than the the thin film (3‐4 μm) vertical structure LED on Cu or Si substrate, the 33 μm free standing thick film vertical structure LEDs exhibited good electrical and optical characteristics for the less damage on the quantum well caused by the laser lift off process. It has also been proved that the 33 μm thick film vertical structure LEDs without any substrate has lower thermal series resistance than the vertical structure LEDs on 300‐400 μm free standing GaN substrate. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
