Abstract
A 320×240 back-illuminated Time-of-Flight CMOS image sensor with 10μm CAPD pixels has been developed. The back-illuminated (BI) pixel structure maximizes the fill factor, allows for flexible transistor position and makes the light path independent of the metal layer. In addition, the CAPD pixel, which is optimized for high speed modulation, results in 80% modulation contrast at 100MHz modulation frequency.
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