Abstract
A photovoltaic detector design based on the graded band gap HgCdTe MBE structure with high conductivity layer (HCL) at interface, which provides photodiodes series resistance and a shortwave cut.off filter is developed. The optimal HCL parameters giving high quantum efficiency and minimal noise equivalent temperature difference were determined by calculations and experimentally confirmed. The hybrid 320×256 IR FPA operating in 8–12 μm spectral range was fabricated. The threshold power responsivity and minimal noise equivalent temperature difference values at wavelength maximum were 1.02×10−7 W/cm2, 4.1×108 V/W and 27 mK, respectively.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
