Abstract
This work proposes the use of integrated high-power InGaN/GaN multiple-quantum-well flip-chip blue micro light-emitting diode (μ-LED) arrays on an AlGaN/GaN-based heterojunction field-effect transistor (HFET), also known as a high electron mobility transistor (HEMT), for various applications: underwater wireless optical communication (UWOC) and smart lighting. Therefore, we demonstrate high-power μ-LED-on-HEMT arrays that consist of 32 × 32 pixelated μ-LED arrays and 32 × 32 pixelated HEMT arrays and that are interconnected by a solder bump bonding technique. Each pixel of the μ-LED arrays emits light in the HEMT on-state. The threshold voltage, the off-state leakage current, and the drain current of the HEMT arrays are −4.6 V, <~1.1 × 10−9 A at gate-to-source voltage (VGS) = −10 V, and 21 mA at VGS = 4 V, respectively. At 12 mA, the forward voltage and the light output power (LOP) of μ-LED arrays are ~4.05 V and ~3.5 mW, respectively. The LOP of the integrated μ-LED-on-HEMT arrays increases from 0 to ~4 mW as the VGS increases from −6 to 4 V at VDD = 10 V. Each pixel of the integrated μ-LEDs exhibits a modulated high LOP at a peak wavelength of ~450 nm, showing their potential as candidates for use in UWOC.
Highlights
III-nitride compound semiconductors are very promising candidates for use in lightemitting diodes (LEDs) [1] and high electron mobility transistors (HEMTs) [2]
AlGaN/GaN-based heterojunction field-effect transistors (HFETs), or HEMT devices, with a similar epitaxial structure were grown on Si(111) substrate using metal-organic chemical vapor deposition (MOCVD)
The I–V characteristics of differ pixel positions are shown in Figure 5b; they are similar for each pixel of the μ-LED arra the forward voltages of different pixel locations are described in Figure 5e; they were about 4.05 V for the μ-LED arrays
Summary
III-nitride compound semiconductors are very promising candidates for use in lightemitting diodes (LEDs) [1] and high electron mobility transistors (HEMTs) [2]. The on-chip monolithic integration of GaN-based LEDs with high-power electronic devices was demonstrated using the selective epi removal (SER). Fabricated LED-on-HEMT devices can only be implemented in low-power applications due to the low light output power (LOP) at a gate-to-source voltage (VGS ) of 1 V [12]. To address these issues, a flip-chip solder bump bonding technique that is effective between LED and AlGaN/GaN-based (HEMT) will provide a better solution for the monolithic integration and improve the performances of LED-on-HEMT devices. The LOP is about 2 times higher than that of the monolithic integrated LED-on-HEMT devices, meaning that these will be suitable for various novel applications
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