Abstract
A hydrogenated amorphous silicon (a‐Si:H) gate driver circuit for vehicle displays is proposed. The new gate driver circuit features a separated bootstrapping structure to enhance the driving ability for low operating temperature. Electrical characteristics of the standard a‐Si:H TFTs are measured and modeled with ‐40 °C, 25 °C and 80 °C SPICE simulations of a 6 stages gate driver circuit show that, with the operation temperature of ‐40 °C, the high level of gate driver circuit (i.e. VGH) maintains above 17 V, while VGH is decreased to 0 V for the conventional schematic.
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