Abstract
This paper is investigated the thermoelectric performance of DLC films deposited by RF plasma CVD method on glass substrates. The comparison of the thermoelectric performances of Si doped DLC film and non-Si doped DLC film are evaluated. DLC films showed Seebeck effect. And their semiconductor character was p type. In the temperature range from 80 to 200 degrees, the Seebeck coefficient of Si doped DLC and non-doped DLC were almost the same. The resistivity value of DLC films decreased exponentially as the temperature became high. From the above result, it is suggested that how to reduce a resistivity by the control of deposition condition, composition of doped elements and so on of DLC film must be examined in order to raise the thermoelectric performance of DLC film.
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