30am2-PN-52 めっき法を用いたビスマステルライド系薄膜及び熱電モジュールに及ぼす熱処理の影響

Abstract

N-type bismuth telluride (Bi-Te) and p-type antimony telluride (Sb-Te) thin films have been prepared by electrodeposition, followed thermal annealing. The electrodeposition was performed by changing the mole ratios of Te/(Bi+Te) and Sb/(Sb+Te). The thermal annealing was performed at 300 ℃ for 1 hour under Ar/H_2 (95/5%). We measured the in-plane Seebeck coefficient and electrical conductivity at room temperature, and then the power factor was estimated using both the measured properties. For n-type films, with the Te/(Bi+Te) of 0.5, the power factor of the Bi-Te thin film reached 4.5 μW/(cm・K^2). For p-type films, with the Sb/(Sb+Te) of 0.35, the power factor of the Sb-Te thin film reached 8.5 μW/(cm・K^2). The XRD peaks of both types of thin films exhibited well crystalized regardless of the mole ratios. Finally, we fabricated thermoelectric generators on flexible substrates by electrodeposition and transfer method, and observed that the generators worked.