Abstract
A high speed 2:1 selector-driver IC developed for external laser modulation is presented. The IC delivers a maximum output voltage swing of 2.2 Vpp at 30 Gbit/s on a 50Ω load. The circuit was fabricated in a laboratory InP/InGaAs double heterojunction bipolar transistor technology with Ft ≃ 56 GHz and Fmax ≃ 43 GHz.
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