Abstract
In this paper, we report on the characterization of Si thin films doped by wet‐chemical laser processing. Using this method, implantation and dopant activation can be performed simultaneously. After laser doping, the mobility, carrier concentration, and resistivity of the films were 74 cm2/V·s, 5.5 × 1017 cm−3, and 0.15 Ω·cm, respectively.
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