Abstract
We introduce a new “platform‐level” laser‐crystallization approach, referred to as spot‐beam crystallization (SBC). The method possesses certain intrinsic technical characteristics and capabilities that are particularly well suited for the manufacture of high‐resolution AMOLED displays. Specifically, the SBC approach possesses the potential to eventually provide microstructurally uniform polycrystalline Si films via ELA‐like partial‐melting‐based crystallization or SLS at low operating costs.
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