Abstract
3 MeV electron irradiation induced-defects in CuInSe 2 (CIS) thin films have been investigated. Both of the carrier concentration and Hall mobility were decreased as the electron fluence exceeded 1×10 17 cm −2. The carrier removal rate was estimated to be about 1 cm −1. To evaluate electron irradiation-induced defect, the electrical properties of CIS thin films before and after irradiation were investigated between 80 and 300 K. From the temperature dependence of the carrier concentration in non-irradiated thin films, we obtained N D=1.8×10 17 cm −3, N A=1.7×10 16 cm −3 and E D=18 meV from the SALS fitting to the experimental data on the basis of the charge balance equation. After irradiation, a new defect level was formed, and N T0 =1.4×10 17 cm −3 and E T=54 meV were also obtained from the same procedure. From the temperature dependence of Hall mobility, the ionized impurity density was discussed before and after the irradiation.
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