Abstract
Abstract— A 3‐D technology CAD (TCAD) tool for the numeric modeling of thin‐film compound transistors is described. The model takes into account the influence of different bulk doping levels due to the non‐stochiometric film composition as well as the influence of donor and acceptor boundary traps. Apart from the field effect, the temperature dependence of the thin‐film transistor (TFT) is also calculated. The TCAD tool successfully explains the behavior of thin CdSe TFTs and shows that the off‐current is determined by the grain‐boundary traps.
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